UV-VUV laser induced phenomena in SiO2 glass
Description
Creation and annihilation of point defects were studied for SiO2 glass exposed to ultraviolet (UV) and vacuum UV (VUV) lights to improve transparency and radiation toughness of SiO2 glass to UV-VUV laser light. Topologically disordered structure of SiO2 glass featured by the distribution of Si-O-Si angle is a critical factor degrading transmittance near the fundamental absorption edge. Doping with terminal functional groups enhances the structural relaxation and reduces the number of strained Si-O-Si bonds by breaking up the glass network without creating the color centers. Transmittance and laser toughness of SiO2 glass for F2 laser is greatly improved in fluorine-doped SiO2 glass, often referred as 'modified silica glass'. Interstitial hydrogenous species are mobile and reactive at ambient temperature, and play an important role in photochemical reactions induced by exposure to UV-VUV laser light. They terminate the dangling-bond type color centers, while enhancing the formation of the oxygen vacancies. These findings are utilized to develop a deep-UV optical fiber transmitting ArF laser photons with low radiation damage
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2003.12.032;
- PII
- S0168583X03022614;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 218
- Journal Issue
- 4
- Journal Page Range
- p. 323-331
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 12. international conference on radiation effects in insulators
- Dates
- 31 Aug - 5 Sep 2003
- Place
- Gramado (Brazil)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Pakistan
- INIS RN
- 35077981
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; ARGON FLUORIDES; CRYSTAL DOPING; FAR ULTRAVIOLET RADIATION; GLASS; LASER RADIATION; LASERS; POINT DEFECTS; SILICON OXIDES; ULTRAVIOLET SPECTRA; VACANCIES
- Descriptors DEC
- ARGON COMPOUNDS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; RADIATIONS; RARE GAS COMPOUNDS; SILICON COMPOUNDS; SORPTION; SPECTRA; ULTRAVIOLET RADIATION
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.