Published October 1997
| Version v1
Journal article
Deep level transient spectroscopy of InAs/GaAs vertically coupled quantum dot laser structures
Creators
- 1. Fiziko-Tekhnicheskij Inst. im. A. F. Ioffe Rossijskoj Akademii Nauk, Sankt-Peterburg (Russian Federation)
Description
In this work we report on the level transient spectroscopy (DLTS) and capacitance-voltage studies of InAs/GaAs vertically coupled quantum dot structures embedded in an active region of laser diode. We found that DLTS spectra are changed dramatically for isochronous annealing temperatures below and above 245 K and for cooling conditions: bias voltage Vb = 0 or of filling pulse voltages Vf > 0
Additional details
Additional titles
- Original title (Russian)
- Нестационарная спектроскопия глубоких уровней в лазерных структурах InAs/GaAs с вертикально связанными квантовыми точками
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 31
- Journal Issue
- 10
- Journal Page Range
- p. 1249-1255
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 31009208
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; GALLIUM ARSENIDES; INDIUM ARSENIDES; LASER MATERIALS; POINT DEFECTS; SEMICONDUCTOR JUNCTIONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; MATERIALS; PNICTIDES; TEMPERATURE RANGE
Optional Information
- Notes
- 18 refs., 4 figs., 2 tabs.