Published February 1994 | Version v1
Journal article Metadata-only

Photon-assisted tunneling in stacked tunnel structures by millimeter wave irradiation

Creators

  • 1. Inst. of Metal Physics, Ukrainian Academy of Sciences, Kiev (Ukraine)
  • 2. Inst. for Radio Astronomy, Ukrainian Academy of Sciences, Kharkov (Ukraine)

Description

The appearance of photon-assisted steps in I-V characteristics of stacked Nb/(Al/AlOx/Nb)n tunnel structures with n=3 and 6 was investigated. The structures were exposed to mm wave irradiation at 45 and 136 GHz. The classical responce of the structures at 45 GHz was observed. At 136 GHz photon-induced steps in the quasiparticle I-V characteristic were observed, which had smaller width than that expected for the corresponding values of frequency and n. (orig.)

Additional details

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
194-196
Journal Page Range
p. 2395-2396.
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
20. IUPAP international conference on low temperature physics (LT-20).
Dates
4-11 Aug 1993.
Place
Eugene, OR (United States).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
25057499
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM; ALUMINIUM OXIDES; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; IRRADIATION; MICROWAVE RADIATION; NIOBIUM; PHOTONS; QUASI PARTICLES; RESPONSE FUNCTIONS; SEMICONDUCTOR JUNCTIONS; SUPERCONDUCTING FILMS; TUNNEL DIODES; TUNNEL EFFECT
Descriptors DEC
ALUMINIUM COMPOUNDS; BOSONS; CHALCOGENIDES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; FILMS; FUNCTIONS; MASSLESS PARTICLES; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TRANSITION ELEMENTS