Published 1977 | Version v1
Miscellaneous Metadata-only

Photoconductivity study on radiation-induced surface state spectrum in MOS structures

Creators

  • 1. Tbilisskij Gosudarstvennyj Univ. (USSR)

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Исследование спектра поверхностных состояний, вводимых радиацией в MOP-структуры методом фотопроводимости

Publishing Information

Imprint Title
6. All-union conference on physics of surface phenomena in semiconductors. Part 1
Journal Page Range
p. 37-39.
Report number
INIS-mf--4526

Conference

Title
6. All-union conference on physics of surface phenomena in semiconductors.
Dates
Nov 1977.
Place
Kiev, Ukrainian SSR.

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
9412690
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
ANNEALING; ELECTRON BEAMS; ENERGY LEVELS; ENERGY-LEVEL DENSITY; INTERFACES; MEV RANGE 01-10; MOS TRANSISTORS; NEAR INFRARED RADIATION; PHOTOCONDUCTIVITY; PHYSICAL RADIATION EFFECTS; SILICON; SPECTRA
Descriptors DEC
BEAMS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; INFRARED RADIATION; LEPTON BEAMS; MEV RANGE; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS

Optional Information

Notes
Short note. Imprint:6. Vsesoyuznoe soveshchanie po fizike poverkhnostnykh yavlenij v poluprovodnikakh. Chast' 1.;Tezisy dokladov.