Published January 1, 1999
| Version v1
Report
Atomistic Simulation of Defect Production in Beta-SiC
Creators
- 1. ASSOC WESTERN UNIVERSITY (United States)
- 2. BATTELLE PACIFIC NEW LAB (US)
- 3. Lawrence Livermore National Laboratory (US)
Description
no abstract available
Availability note (English)
Available from Materials Research Society Symposium Proceedings, 504(45-50); Materials Research Society,Warrendale, ,UNITED STATES.Additional details
Publishing Information
- Imprint Pagination
- [vp.]
- Report number
- PNNL-SA--29650
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 35020081
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Non-conventional Literature
- Descriptors DEI
- COMPUTERIZED SIMULATION; CRYSTAL DEFECTS; IRRADIATION; PHYSICAL RADIATION EFFECTS; SILICON CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CRYSTAL STRUCTURE; RADIATION EFFECTS; SILICON COMPOUNDS; SIMULATION
Optional Information
- Contract/Grant/Project number
- KC0201020; AC06-76RL01830
- Notes
- Atomistic Mechanisms in Beam Synthesis and Irradiation of Materials
- Funding organization
- US Department of Energy (United States)