Hydrogen in gas phase and ion implantation doped amorphous silicon

Amorphous silicon prepared by the glow discharge technique has been doped either during the gas phase deposition or thereafter by ion implantation. The hydrogen concentration, csub(H), of these samples has been measured with the 15N nuclear reaction. In gas phase doped samples, csub(H) has been found to vary with impurity type and concentration. In ion implanted material initially present csub(H) is retained, irrespective of the implanted ion species, unless doses is excess of 1016 ions/cm2 are applied. As regards the applicability to device production, both techniques appear promising. (orig.)