Nonlinear carrier transport within gigahertz-terahertz frequencies in spatially non-uniform InSb

Influence of a dc electric field, microwave and terahertz (up to 1.63 THz) excitation on the carrier transport in moderately compensated n-InSb containing graded n/n+ junction is investigated. Hot electron thermo-electromotive force and field dependences of the dc-conductivity were measured within 10-110 K. Peculiarities of electron gas heating and low-temperature electron transport can be attributed to the potential fluctuation effects due to random spatial distribution of impurity density in high-resistivity InSb crystal.