Published January 26, 2009 | Version v1
Journal article

Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions

  • 1. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
  • 2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)
  • 3. Institute of Materials Research and Engineering, Singapore 117602 (Singapore)
  • 4. Department of Physics, University of Hong Kong (Hong Kong)

Description

Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 deg. C. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼3.0 eV (415 nm) and the strong green-yellow band at ∼2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼3.8 eV and the near infrared band at ∼1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
94
Journal Issue
4
Journal Page Range
p. 041102-041102.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2009 American Institute of Physics