Published 1987 | Version v1
Book Metadata-only

Radiation stability in optoelectronics

Creators

Description

The problems on radiation stability in products and semiconductor optoelectronics materials are described in the paper; problems on application of stable to external actions detectors and radiation sources, as well as passive elements of optoelectron systems are considered. Special attention is paid to the methods of radiation stability increase and optoelectron device reliability. The book is written according to the data on open native and foreign press

Additional details

Additional titles

Original title (Russian)
Радиационная стойкост' в оптоэлектронике

Publishing Information

Publisher
Voennoe Izdatel'stvo.
Imprint Place
Moscow (USSR)
Imprint Pagination
166 p.

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
20027663
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
COSMIC RADIATION; ELECTRON BEAMS; FERRITE GARNETS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; GERMANIUM; INDIUM PHOSPHIDES; NEUTRON FLUENCE; PHYSICAL PROPERTIES; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON; TELLURIDES; X RADIATION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; IONIZING RADIATIONS; LEPTON BEAMS; MATERIALS; METALS; MINERALS; OXIDE MINERALS; PARTICLE BEAMS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS; TELLURIUM COMPOUNDS

Optional Information

Notes
98 refs.; 4 figs; 4 tabs.