Published February 1, 2018 | Version v1
Journal article Metadata-only

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

Creators

  • 1. School of Physics, Beijing Institute of Technology, Beijing 100081 (China)
  • 2. Elementary Educational College, Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University, Beijing 100048 (China)

Description

ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/27/2/027104

Additional details

Identifiers

DOI
10.1088/1674-1056/27/2/027104;

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
27
Journal Issue
2
Journal Page Range
[5 p.]
ISSN
1674-1056

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52045960
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
GRAPHENE; INTERFACES; LAYERS; OXYGEN; SILVER; TITANIUM NITRIDES; VACANCIES; ZINC; ZINC OXIDES
Descriptors DEC
CARBON; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; METALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; POINT DEFECTS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; ZINC COMPOUNDS