Published June 15, 2000 | Version v1
Journal article

Maximum entropy principle within a total energy scheme: Application to hot-carrier transport in semiconductors

  • 1. Dipartimento di Ingegneria dell' Innovazione ed Istituto Nazionale di Fisica della Materia, Universita di Lecce, Via Arnesano s/n, 73100 Lecce (Italy)
  • 2. Dipartimento di Matematica, Universita di Catania, Viale A. Doria 6, 95125 Catania (Italy)

Description

The maximum entropy principle is applied to a conducting band with energy wave vector dispersion of general form and to an arbitrary number of generalized kinetic fields. By considering a linear expansion around a local Maxwellian, within a total average energy scheme, we obtain a closed system of hydrodynamic equations for a full band model in which all the unknown constitutive functions are completely determined. With this approach, under spatially homogeneous conditions we present a systematic study of the small-signal analysis for the most important response functions of the electron system in the general framework of the moments theory. The case of a n+nn+ nonhomogeneous structure is also considered. Numerical hydrodynamic calculations are validated by a comparison with Monte Carlo simulations performed for the case of n-type Si at 300 K

Additional details

Identifiers

DOI
10.1103/PhysRevB.61.16667;
PII
S0163-1829(00)06423-7;

Publishing Information

Journal Title
Physical Review. B, Condensed Matter and Materials Physics
Journal Volume
61
Journal Issue
24
Journal Page Range
p. 16667-16681
ISSN
1098-0121

Optional Information

Notes
(c) 2000 The American Physical Society