Published 1989
| Version v1
Book
Resistless microfabrication of Cu thin films on n-type GaAs by projection patterned excimer laser doping
Creators
- 1. Riken Research Institute, Frontier Research Program, Wako, Saitama 351-01 (Japan)
Description
Resistless microfabrication of Cu thin films on n-type GaAs by projection patterned laser doping using a KrF excimer laser and a SiH4 gas is described. Copper thin films with a linewidth as narrow as 2.35μm are deposited selectively on the doped region by electroplating in a CuSO4 aqueous solution. The resistivity of the deposited Cu films is evaluated to be 2.45 x 10-6 Ω cm, which is compared to that of bulk Cu. Using this technique, nonalloyed ohmic contacts can be formed with a specific contact resistance of 2.32 x 10-5Ω cm2, which is one-thirtieth of that of the conventional alloyed contacts. The mechanism of Cu film deposition by electroplating is discussed
Additional details
Publishing Information
- Publisher
- Society of Photo-Optical Instrumentation Engineers.
- Imprint Place
- Bellingham, WA (USA)
- Imprint Title
- Laser-optical processing of electronic materials
- Imprint Pagination
- 225 p.
- Journal Page Range
- p. 47-54.
Conference
- Title
- International Society for Optical Engineering (SPIE) conference.
- Dates
- 8-13 Oct 1989.
- Place
- Santa Clara, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22006071
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BEAM-PLASMA SYSTEMS; COPPER; ELECTRIC CONTACTS; ELECTROPLATING; GALLIUM ARSENIDES; KRYPTON FLUORIDE LASERS; LASER-PRODUCED PLASMA; N-TYPE CONDUCTORS; SILANES; SOLID-STATE PLASMA; SUBSTRATES; THIN FILMS
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; DEPOSITION; ELECTRICAL EQUIPMENT; ELECTRODEPOSITION; ELECTROLYSIS; ELEMENTS; EQUIPMENT; EXCIMER LASERS; FILMS; GALLIUM COMPOUNDS; GAS LASERS; HYDRIDES; HYDROGEN COMPOUNDS; LASERS; MATERIALS; METALS; PLASMA; PLATING; PNICTIDES; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENTS
Optional Information
- Secondary number(s)
- CONF-8910361--.