Published 1989 | Version v1
Book

Resistless microfabrication of Cu thin films on n-type GaAs by projection patterned excimer laser doping

  • 1. Riken Research Institute, Frontier Research Program, Wako, Saitama 351-01 (Japan)

Description

Resistless microfabrication of Cu thin films on n-type GaAs by projection patterned laser doping using a KrF excimer laser and a SiH4 gas is described. Copper thin films with a linewidth as narrow as 2.35μm are deposited selectively on the doped region by electroplating in a CuSO4 aqueous solution. The resistivity of the deposited Cu films is evaluated to be 2.45 x 10-6 Ω cm, which is compared to that of bulk Cu. Using this technique, nonalloyed ohmic contacts can be formed with a specific contact resistance of 2.32 x 10-5Ω cm2, which is one-thirtieth of that of the conventional alloyed contacts. The mechanism of Cu film deposition by electroplating is discussed

Additional details

Publishing Information

Publisher
Society of Photo-Optical Instrumentation Engineers.
Imprint Place
Bellingham, WA (USA)
Imprint Title
Laser-optical processing of electronic materials
Imprint Pagination
225 p.
Journal Page Range
p. 47-54.

Conference

Title
International Society for Optical Engineering (SPIE) conference.
Dates
8-13 Oct 1989.
Place
Santa Clara, CA (USA).

Optional Information

Secondary number(s)
CONF-8910361--.