Properties of tin doped indium oxide thin films prepared by magnetron sputtering
- 1. Indian Association for the Cultivation of Science, Calcutta-700 032, India
Description
Indium tin oxide (ITO) films have been prepared by the magnetron sputtering technique from a target of a mixture of In2O3 and SnO2 in the proportion 9:1 by weight. By optimizing the deposition conditions it has been possible to produce highly transparent (transmission approx.90%) and conducting (resistivity approx.10-5 Ω cm) ITO films. A resistivity approx.10-4 Ω cm has been obtained for films of thickness approx.1000 A at a comparatively low substrate temperature of 50 0C and without using oxygen in the sputtering chamber. To characterize the films, the following properties have been studied, viz., electrical conductivity, thermoelectric power, Hall effect, optical transmission, and band gap. The effect of annealing in air and vacuum on the properties of the films have also been studied
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 54
- Journal Issue
- 6
- Series
- J. Appl. Phys.
- Journal Page Range
- 3497-3501
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 14791768
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY GAP; EXPERIMENTAL DATA; FILMS; HALL EFFECT; INDIUM OXIDES; MAGNETRONS; MEDIUM TEMPERATURE; OPTICAL PROPERTIES; OPTIMIZATION; QUANTITY RATIO; SPUTTERING; THERMOELECTRIC PROPERTIES; THICKNESS; TIN ADDITIONS; TIN OXIDES; TRANSMISSION
- Descriptors DEC
- CHALCOGENIDES; DATA; DIMENSIONS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; INDIUM COMPOUNDS; INFORMATION; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TIN COMPOUNDS