Study of gold diffusion in thin-film glass semiconductor GeTe4 by nuclear methods
Description
Recent considerable interest has been brought to amorphous S.C. Their study can lead to a greater understanding of the non-crystalline state as well as of crystallization mechanisms. Gold thin-film-diffusion profiles into the A.S.C. Ge18Te82 has been studied versus different annealing conditions using nuclear backscattering analysis. Atomic diffusion into the amorphous film has been showed to be tightly related to the diffusion into polycristalline configurations, and classical polycrystalline models have been successfully employed in the amorphous case. Moreover, the comparison between air and vacuum annealing has emphasized the delaying action of oxygen. This element, adsorbed mainly on Ge and Te sites, leads to oxide formation that can even inhibit the nucleation and growth processes of the crystalline compound AuTesub(1,7)
Availability note (English)
MF available from INIS under the Report Number.Abstract (French)
Les materiaux S.C.A. presentent un interet croissant, en raison de leur simplicite de mise en oeuvre sous forme de couches minces. Ils permettant une meilleure comprehension des milieux non cristallins, ainsi que des mecanismes de cristallisation. La diffusion de l'or dans le S.C.A. Ge18Te82 en couches minces a ete suivie a l'aide de la retrodiffusion elastique de particules α qui permet d'obtenir les profils de concentration d'or en fonction des conditions de recuits. Il a ete montre que la diffusion dans le materiau amorphe s'apparente a la diffusion dans des materiaux polycristallins et que les modeles generalement admis pour les polycristallins peuvent s'appliquer dans notre cas. De plus, des recuits conduits a l'air et sous vide ont permis de mettre en evidence le role retardateur de l'oxygene. L'oxygene qui se fixe preferentiellement sur le germanium et partiellement sur le tellure limite la diffusion, et la formation d'oxydes ralentit la nucleation et la croissance du compose cristallin AuTesub(1,7)Files
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Additional details
Additional titles
- Original title (French)
- Etude de la diffusion de l'or dans le verre semiconducteur GeTe
Publishing Information
- Imprint Pagination
- 90 p.
- Report number
- LYCEN--8161
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 13704092
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Numerical Data, Thesis
- Descriptors DEI
- ALPHA PARTICLES; AMORPHOUS STATE; BACKSCATTERING; CRYSTAL GROWTH; DIFFUSION; EXPERIMENTAL DATA; FILMS; GERMANIUM TELLURIDES; GOLD; NONDESTRUCTIVE ANALYSIS; NUCLEATION; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL ANALYSIS; DATA; ELEMENTS; GERMANIUM COMPOUNDS; HELIUM IONS; INFORMATION; IONS; METALS; NUMERICAL DATA; SCATTERING; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENTS