First-principle study on electronic structure property of GaN/AlN

Ferromagnetism of GaN and AlN based magnetic semiconductors was investigated by ab initio calculations based on the local density approximation. In a system of Mn atom doped GaN and AlN, the ferromagnetic ordering of Mn magnetic moments was induced by hole doping. It was also found that 3d transition metal atoms of Fe and Co showed the ferromagnetic ordering of their magnetic moments in GaN and AlN without any additional carrier doping treatments. Appearance of the ferromagnetism in these systems suggests possibility for a fabrication of a transparent ferromagnetic which will have great impact on industrial applications in magneto optical devices.