Published February 1983
| Version v1
Journal article
Matrix continued-fraction calculation of localization length in disordered systems
Creators
- 1. Consejo Nacional de Investigaciones Cientificas y Tecnicas, Buenos Aires (Argentina)
- 2. Instituto de Desarrolo Tecnologico para la Industria Quimica, Santa Fe (Argentina)
Description
A Matrix Continued-Fraction method is used to study the localization length of the states at the band center of a two dimensional crystals with disorder given by the Anderson model. It is found that exponentially localized states which scale according to the work of Mac Kinnon and Kramer, becomes weakly localized as the disorder becomes weaker, and there is some critical disorder for which the localization length does not saturate with the width of the strips, this confirms the resuts found by Pichard and Sarma. Weakly localized states are also found in one dimension for w/v <or approx., 1. The transition from extended to localized states is also examined in one dimension. (author)
Abstract (Portuguese)
O metodo da matriz fracionada continuada e usado para estudar o comprimento de localizacao dos estados no centro da banda de um cristal de duas dimensoes com desordem dada pelo modelo de Anderson. Descobre-se que estados localizados exponencialmente que se escalam de acordo com o trabalho de Mac Kinnon e Kramer, tornam-se fracamente localizados a medida que a desordem enfraquece, e ha alguma desordem critica para a qual o comprimento de localizacao nao satura com a largura ds tiras, isto confirma os resultados de Pichard e Sarma. Estados fracamente localizados, sao tambem achados em uma dimensao para W/v <or approx., 1. A transicao de estudos estendidos para localizados, tambem e estudada em uma dimensao. (A.C.A.S.)Additional details
Publishing Information
- Journal Title
- Revista Brasileira de Fisica
- Journal Volume
- 13
- Journal Issue
- special issue
- Series
- Rev. Bras. Fis.
- Journal Page Range
- 405-410
- ISSN
- 0374-4922
- CODEN
- RBFSA
Conference
- Title
- 1. Brazilian School on Semiconductor Physics.
- Dates
- 31 Jan - 11 Feb 1983.
- Place
- Campinas, SP (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 21088591
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CONTINUED FRACTIONS; CRYSTALS