Published December 23, 2011
| Version v1
Journal article
Excitation Power Dependence Of Photoluminescence From GaAs Quantum Dot Prepared By Droplet Epitaxy Method
Creators
- 1. Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae (Korea, Republic of)
- 2. Epi-manufacturing Technology, Samsung LED Co., Ltd., Suwon (Korea, Republic of)
- 3. Division of Advanced Materials Engineering, Chonbuk National University, Jeonju (Korea, Republic of)
- 4. Department of Physics, Yeungnam University, Gyeongsan (Korea, Republic of)
- 5. Department of Visual Optics, Kyungwoon University, Gumi (Korea, Republic of)
- 6. Advanced Instrument Technology Center, Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of)
Description
GaAs quantum dot (QD) was grown by droplet epitaxy (DE) method and the excitation power dependence of photoluminescence (PL) were carried out. To investigate the effect of annealing temperature on QDs optical properties, the two step RTA process was carried out in a various temperature range from 800 to 1000 deg. C. As the thermal annealing temperature increases, the PL peak position is blue-shifted due to the change of the composition and size distribution of QDs, and the highest PL intensity is observed at the sample annealed at 900 deg. C. The integrated PL intensity (IPL) is plotted against the excitation density in a log-log scale and the slope was calculated.
Additional details
Identifiers
- DOI
- 10.1063/1.3666494;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1399
- Journal Issue
- 1
- Journal Page Range
- p. 543-544
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 30. international conference on the physics of semiconductors
- Dates
- 25-30 Jul 2010
- Place
- Seoul (Korea, Republic of)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43091069
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRYSTAL GROWTH; DENSITY; DROPLETS; EXCITATION; GALLIUM ARSENIDES; LASERS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM DOTS; TEMPERATURE DEPENDENCE; TEMPERATURE MEASUREMENT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EMISSION; ENERGY-LEVEL TRANSITIONS; EPITAXY; GALLIUM COMPOUNDS; HEAT TREATMENTS; LUMINESCENCE; NANOSTRUCTURES; PARTICLES; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES
Optional Information
- Notes
- (c) 2011 American Institute of Physics