Published October 1985
| Version v1
Journal article
S-type negative differential conduction in InSb at room temperature
- 1. AN Ukrainskoj SSR, Kiev. Inst. Poluprovodnikov
Description
The volt-ampere characteristics VAC of p-InSb crystals were studied at room temperature. p-InSb samples possessed an optimum aloying degree with the hole concentration p0=1017 cm-3. It is shown that in strong electrical fields corresponding to shock ionization, the VAC have sections with S-negative differential conductivity (S-NDC). The electric field value corresponding to NDC initiation is dependent essentially on the distance between ohmic contacts, surface generating ability and also on crystal cross-section dimensions
Additional details
Additional titles
- Original title (Russian)
- С-ODP в InSb при комнатной температуре
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 19
- Journal Issue
- 10
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1895-1897
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 17052857
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIMONIDES; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; INDIUM COMPOUNDS; PINCH EFFECT; SURFACE PROPERTIES
- Descriptors DEC
- ANTIMONY COMPOUNDS; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES
Optional Information
- Notes
- For English translation see the journal Soviet Physics - Semiconductors (USA).