Effect of annealing on structural and electrical properties of ZnO and In2S3:Al thin layers

Thin films of ZnO and In2S3:Al are deposited on Pyrex substrates by spray technique. Structural and electrical properties of ZnO and β-In2S3:Al compounds were studied using X Ray Diffraction (XRD), (MEB) and the Vander Pauw method before and after annealing. The X-rays revealed that, ZnO and In2S3:Al were well crystallized respectively in the hexagonal and cubic structure. The main orientations of ZnO were (101), (100) and (110). The (101) direction is the preferentially one. The annealing favors the preferential peak crystallization with a reduction of the grains size and the thickness layer. The β-In2S3 contain Aluminum inclusion by introducing the ratio x= [Al3+]/[In3+] in sprayed solution. X-ray diffraction spectra of In2-xAlxS3 thin layer, realized for the value of z equal to 20%, show well-defined peaks of (311), (400), (511), and (440) principal orientations corresponding to cubic structure of β-In2S3. For In2S3:Al, we note that the annealing increase the intensity of all peaks with an increase of the grains size and the thickness layer. Besides, thanks to the determination of the resistance from which we calculated resistivity, we note that the annealing increase conductivity of β-In2S3:Al and decrease it for ZnO.