Photoelectric properties of multilayer heterostructures formed by semiconductor powders in binder

The investigated multiplayer heterostructures in a binder layer containing CdS with n-type conductivity and a binder layer containing As2Se3 with p-type conductivity when reffered to their photoelectrical properties have proved some analogous characteristics with those of the classical heterostructures although the lack of direct contact between the particles with different type of conductivity. The investigated multiplayer heterostructure proves the possibility of receiving a comparatively simple technology for low frequency detectors in the visible and near infrared range at frequency range 10 - 100Hz under minimal applied electric tension of 50 - 100 V, allowing high stability electric and photoelectric parameters