Published 1994 | Version v1
Miscellaneous Metadata-only

The influence of neutron irradiation and recovery annealing on GaAs single crystal properties

Creators

  • 1. Research Institute of Materials of Electronic Technology, Kaluga (Russian Federation)
  • 2. Institute of Crystallography of RAS, Kaluga Branch (Russian Federation)
  • 3. Moskovskoe Vysshee Tekhnicheskoe Uchilishch, Moscow (Russian Federation)

Description

Short communication

Part of:
Abstracts of 8. Conference on Semi-Insulating 3-5 Materials

Additional details

Publishing Information

Imprint Place
Warsaw (Poland)
Imprint Title
Abstracts of 8. Conference on Semi-Insulating 3-5 Materials
Imprint Pagination
[100 p.].
Journal Page Range
p. P-8.

Conference

Title
8. Conference on Semi-Insulating 3-5 Materials.
Dates
6-10 Jun 1994.
Place
Warsaw (Poland).

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
28061079
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
ANNEALING; CRYSTAL DEFECTS; ELECTRICAL PROPERTIES; GALLIUM ARSENIDES; MEETINGS; MONOCRYSTALS; NEUTRON BEAMS; PHYSICAL RADIATION EFFECTS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL STRUCTURE; CRYSTALS; GALLIUM COMPOUNDS; HEAT TREATMENTS; NUCLEON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS

Optional Information