Published August 2013
| Version v1
Journal article
White electroluminescence of n-ZnO:Al/p-diamond heterostructure devices
- 1. College of Science, University of Shanghai for Science and Technology, Shanghai 200093 (China)
Description
An n-ZnO:Al/p-boron-doped diamond heterostructure electroluminescent device is produced, and a rectifying behavior can be observed. The electroluminescence spectrum at room temperature exhibits two visible bands centred at 450 nm–485 nm (blue emission) and 570 nm–640 nm (yellow emission). Light emission with a luminance of 15 cd/m2 is observed from the electroluminescent device at a forward applied voltage of 85 V, which is distinguished from white light by the naked eye. (interdisciplinary physics and related areas of science and technology)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/22/8/088101Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 22
- Journal Issue
- 8
- Journal Page Range
- [4 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45034327
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BORON; DIAMONDS; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; EMISSION SPECTRA; HETEROJUNCTIONS; N-TYPE CONDUCTORS; POTASSIUM ALLOYS; SODIUM ALLOYS; TEMPERATURE RANGE 0273-0400 K; VISIBLE RADIATION; ZINC OXIDES
- Descriptors DEC
- ALLOYS; CARBON; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; LUMINESCENCE; MATERIALS; MINERALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATIONS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTRA; TEMPERATURE RANGE; ZINC COMPOUNDS