Published June 12, 2008 | Version v1
Journal article

Influence of oxygen partial pressure on magnetron sputtered Sr0.8Nd0.3Bi2.5Ta2O9+x ferroelectric thin films

  • 1. School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
  • 2. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
  • 3. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

Description

During magnetron sputtering deposition of SrBi2Ta2O9 thin films, oxygen gas is introduced in the deposition chamber to compensate the oxygen loss during sputtering. In this paper, the influence of oxygen partial pressure is systematically investigated in sputtering of Sr0.8Nd0.3Bi2.5Ta2O9+x thin films, using X-ray diffraction, X-ray photoelectron spectroscopy and field emission scanning electron microscopy. The studies confirm that at various oxygen partial pressure Nd3+ ions substitute into the bismuth layered perovskite structure, preferentially at the Sr2+ site. The deposition rate, composition, microstructure and polarization properties of the films highly depend on the oxygen partial pressure

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jallcom.2007.03.095

Additional details

Identifiers

DOI
10.1016/j.jallcom.2007.03.095;
PII
S0925-8388(07)00709-8;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
457
Journal Issue
1-2
Journal Page Range
p. 549-554
ISSN
0925-8388
CODEN
JALCEU

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.