Non-radiative transitions in semiconductors

Theoretical and practical aspects of the effect of non-radiative transitions on semiconductor performance are reviewed with emphasis on phonon-induced and defect Auger processes. In considering the relation between basic theoretical studies and practical applied work on device degradation, a description is given of the atomic processes involved in the more important mechanism of device deterioration and the theoretical understanding of the mechanism of these underlying processes. A survey of models proposed for 'killer' centres is included. (U.K.)