Published February 1, 1983 | Version v1
Journal article

Time-resolved x-ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

  • 1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830

Description

Nanosecond resolution time-resolved x-ray diffraction measurements have been used to study the temperature and temperature gradients in <100> and <111> oriented silicon crsytals during pulsed laser annealing. Thermal strain analysis of time-resolved extended Bragg scattering has shown the lattice temperature to reach the melting point during 15-ns, 1.5-J/cm2 ruby laser pulses and to remain at the melting point during the high reflectivity phase (HRP). The temperature gradients at the liquid-solid interface were found to be in the range of approx.107 K/cm during the HRP

Additional details

Publishing Information

Journal Title
Appl. Phys. Lett.
Journal Volume
42
Journal Issue
3
Series
Appl. Phys. Lett.
Journal Page Range
282-284
ISSN
0003-6951