Published October 25, 2006 | Version v1
Journal article Metadata-only

Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

Creators

  • 1. Physics Department, Chung Yuan Christian University, Chung-Li, Taiwan (China)
  • 2. Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan (China)
  • 3. Department of Physics, National Central University, Chung-Li 320, Taiwan (China)
  • 4. Physics Department, National Taiwan University, Taipei, Taiwan (China)
  • 5. Department of Electronic Engineering, Tung Nan Institute of Technology, Taipei, Taiwan (China)

Description

We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN. The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN. (letter to the editor)

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/18/L543/cm6_42_L02.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Identifiers

URL
http://stacks.iop.org/0953-8984/18/L543/cm6_42_L02.pdf; http://www.iop.org/;
DOI
10.1088/0953-8984/18/42/L02;
PII
S0953-8984(06)31284-2;

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
18
Journal Issue
42
Journal Page Range
p. L543-L549
ISSN
0953-8984
CODEN
JCOMEL

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38014521
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; CARRIER MOBILITY; CHARGE CARRIERS; ELECTRICAL PROPERTIES; INDIUM; INDIUM NITRIDES; PHOTOLUMINESCENCE; VACANCIES
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; EMISSION; HEAT TREATMENTS; INDIUM COMPOUNDS; LUMINESCENCE; METALS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; POINT DEFECTS