Interphase interaction at indium phosphide contacts with metals of group 1

The interphase interaction at indium phosphide contacts with layers of metals of group I (Cu, Ag, Au) annealed in an atmosphere of oxygen is investigated using the method of Rutherford backscattering, x-ray structure analysis, and electrophysical measurements. The relation between the character of the interphase process and the behavior of the electrophysical parameters of the Schottky barriers is traced. The mechanism of degradation in the contacts mentioned is discussed