Published February 1994 | Version v1
Journal article Metadata-only

Anomalous magnetic field dependence of differential resistance in a superconducting Nb-InAs-Nb junction

Creators

  • 1. NTT Basic Research Labs., Tokyo (Japan)

Description

The differential resistance in an InAs-inserted-channel InAlAs/InGaAs heterostructure coupled superconducting junction is enhanced within the Nb superconducting gap energy by applying a magnetic field. The enhancement saturates under a magnetic field of several mT. This behavior suggests that the pair-potential in the InAs-channel is induced by the superconducting proximity effect. The magnetic field reduces the penetration of the pair-potential and the Andreev reflection probability, which causes the enhancement of the differential resistance. (orig.)

Additional details

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
194-196
Journal Page Range
p. 1757-1758.
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
20. IUPAP international conference on low temperature physics (LT-20).
Dates
4-11 Aug 1993.
Place
Eugene, OR (United States).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
25057485
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ELECTRIC CONDUCTIVITY; ENERGY GAP; GALLIUM ARSENIDES; INDIUM ARSENIDES; JOSEPHSON JUNCTIONS; LAYERS; MAGNETIC FIELDS; NIOBIUM; POTENTIALS; PROXIMITY EFFECT; SEMICONDUCTOR LASERS; SUPERCONDUCTING JUNCTIONS; TEMPERATURE DEPENDENCE; TUNNEL EFFECT
Descriptors DEC
AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; METALS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS; TRANSITION ELEMENTS