Published January 1982
| Version v1
Journal article
A spectroscopic study of Na+-bound electrons at Si-SiO2 interfaces
Creators
- 1. Technische Univ. Muenchen, Garching (Germany, F.R.). Fakultaet Physik
Description
For interfaces contaminated with Na+ ions in the concentration range approx. equal to 1011 cm-2 we observe an absorption peak for infrared radiation polarized parallel to the surface. The peak is observed in a gate-voltage sweep at low electron densities. Its amplitude grows linearly with concentration of Na+ and is found for a broad range of frequencies in the 10 meV range. (orig.)
Additional details
Publishing Information
- Journal Title
- Surf. Sci.
- Journal Volume
- 113
- Journal Issue
- 1-3
- Series
- Surf. Sci.
- Journal Page Range
- 144-147
- ISSN
- 0039-6028
Conference
- Title
- 4. International conference on electronic properties of two-dimensional systems.
- Dates
- 24 - 28 Aug 1981.
- Place
- New London, NH, USA.
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 13681669
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ABSORPTION SPECTRA; BOUND STATE; CONTAMINATION; ELECTRIC CONDUCTIVITY; ELECTRONS; EXPERIMENTAL DATA; FREQUENCY DEPENDENCE; INFRARED RADIATION; INTERFACES; SILICON; SILICON OXIDES; SODIUM IONS
- Descriptors DEC
- ATOMIC IONS; CHALCOGENIDES; CHARGED PARTICLES; DATA; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; INFORMATION; IONS; LEPTONS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS; SPECTRA