Published May 7, 2003 | Version v1
Journal article

Integer quantum Hall transitions in the presence of off-diagonal disorder

  • 1. Department of Physics, Shanghai Jiaotong University, 1954 Huashan Road, Shanghai 200030 (China)

Description

We study the disorder-induced quantum Hall-to-insulator transition in a lattice model with only off-diagonal disorder. The localization length of the system is calculated by using the finite-size scaling method combined with the transfer-matrix technique. By increasing the off-diagonal disorder strength we find that the extended states do not float up in energy, but move towards the direction of lower energy. As a consequence, a direct transition from a higher integer quantum Hall state to an insulator becomes possible, in agreement with previous studies based on a tight-binding model with only diagonal disorder

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/15/2693/c31721.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
15
Journal Issue
17
Journal Page Range
p. 2693-2700
ISSN
0953-8984
CODEN
JCOMEL

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
34054184
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CHEMICAL BONDS; HALL EFFECT; MATHEMATICAL MODELS; PHASE TRANSFORMATIONS; TRANSFER MATRIX METHOD
Descriptors DEC
CALCULATION METHODS