Published May 7, 2003
| Version v1
Journal article
Integer quantum Hall transitions in the presence of off-diagonal disorder
Creators
- 1. Department of Physics, Shanghai Jiaotong University, 1954 Huashan Road, Shanghai 200030 (China)
Description
We study the disorder-induced quantum Hall-to-insulator transition in a lattice model with only off-diagonal disorder. The localization length of the system is calculated by using the finite-size scaling method combined with the transfer-matrix technique. By increasing the off-diagonal disorder strength we find that the extended states do not float up in energy, but move towards the direction of lower energy. As a consequence, a direct transition from a higher integer quantum Hall state to an insulator becomes possible, in agreement with previous studies based on a tight-binding model with only diagonal disorder
Availability note (English)
Available online at http://stacks.iop.org/0953-8984/15/2693/c31721.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0953-8984/15/2693/c31721.pdf; http://www.iop.org/;
- DOI
- 10.1088/0953-8984/15/17/321;
- PII
- S0953-8984(03)55232-8;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 15
- Journal Issue
- 17
- Journal Page Range
- p. 2693-2700
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 34054184
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHEMICAL BONDS; HALL EFFECT; MATHEMATICAL MODELS; PHASE TRANSFORMATIONS; TRANSFER MATRIX METHOD
- Descriptors DEC
- CALCULATION METHODS