Published December 7, 2006 | Version v1
Journal article

Spin polarization in Zn0.95Co0.05O:(Al,Cu) thin films

  • 1. Institut fuer Experimentelle Physik II, Fakultaet fuer Physik und Geowissenschaften, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig (Germany)

Description

ZnCoO : Al, ZnCoO : (Al,Cu), and reference samples without Co have been grown by pulsed laser deposition to investigate the influence of Co-dopants and Cu-codopants on the magneto transport properties of ZnO. Positive magnetoresistance and anomalous Hall effect have been observed for ZnCoO : (Al,Cu). Versatile theoretical approaches for modelling positive magnetoresistance in ZnO-based diluted magnetic semiconductors are still to be developed. Negative magnetoresistance due to the scattering of spin-polarized charge carriers at isolated magnetic impurities has been observed in ZnO : (Al,Cu) without Co-dopants and successfully modelled. Cu-codopants enhance the positive and negative magnetoresistance in ZnCoO : Al and ZnO : Al, respectively, by one order of magnitude

Availability note (English)

Available online at http://stacks.iop.org/0022-3727/39/4920/d6_23_003.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
39
Journal Issue
23
Journal Page Range
p. 4920-4924
ISSN
0022-3727
CODEN
JPAPBE