Delocalized dislocations in quantum points

The theoretical model, describing the generation of the dislocations of incompatibility with the delocalized nuclei in the island film is proposed. The evaluation of the nanoislands (quantum dots) parameters with the delocalized dislocations of incompatibility in the Ge/Si system is carried out. It is shown within the frames of the proposed model, that generation of the delocalized dislocations of incompatibility in the quantum dots within the wide interval of their parameters is energetically more efficient than the generation of the ideal dislocations (usually considered in the models of the quantum dots with dislocations)