Effect of microdefects on the absorption of x-ray in silicon during Laue diffraction

Microdefects in silicon non-dislocation crystals, grown according to the Czochralski method, are studied using metallographic analysis, determination of integral characteristics of X-ray anomalous passing and measurement of lattice parameter values. It is established, that microdefects form local elastically strained regions with X-ray diffraction conditions different from the matrix. The calculation has shown, that a change in differaction conditions, caused by the presence of microdefects, constitutes aon the average 0.1-0.3''