Published 1995
| Version v1
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Room-temperature visible electroluminescent nanocrystal Ge device formed by ion implantation
Creators
- 1. California Institute of Technology, Pasadena, (United States)
Description
Short communication
Files
28080451.pdf
Files
(22.8 kB)
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Additional details
Publishing Information
- Publisher
- Accademic Press.
- Imprint Title
- Ninth international conference on ion beam modification of materials. Book of abstracts
- Imprint Pagination
- 452 p.
- Journal Page Range
- p. 7097.
- Report number
- INIS-AU--0004
Conference
- Title
- 9. international conference on ion beam modification of materials.
- Acronym
- IBMM'95
- Dates
- 5-10 Feb 1995.
- Place
- Canberra (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 28080451
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; CHARGED-PARTICLE TRANSPORT; ELECTROLUMINESCENCE; GERMANIUM IONS; ION IMPLANTATION; PHONONS; SEMICONDUCTOR DEVICES; SILICON OXIDES; TUNNEL EFFECT
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; EMISSION; HEAT TREATMENTS; IONS; LUMINESCENCE; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; QUASI PARTICLES; RADIATION TRANSPORT; SILICON COMPOUNDS