Single-trap emission kinetics of vertical β-Ga₂O₃ Schottky diodes by deep-level transient spectroscopy

We report the emission kinetics of a single-electron trap (E1, E _C–0.63 eV) in Sn-doped ($\overline{2}$01) β-Ga₂O₃ crystals studied using deeplevel transient spectroscopy (DLTS). The time constant ($\tau$) of the electrons emitted from the trap level E1 was thoroughly investigated as a function of the temperature and the electric field (E-field) . The temperature-dependence $\tau$ of E1 was extracted by both the temperature-scanning and isothermal modes of DLTS. It was found that the emission process accelerated exponentially from 200 K to 350 K. The E-field dependence of the emission time constant could be divided into two regimes for all measurement steps (250–325 K). In the low-electric-field regime, the emission time constant of the trap decreased slightly with a strengthened E-field. With a further enhancement of the E-field (E > 1.76 MV cm⁻¹), the field-enhanced emission rate was accurately modeled by the Poole–Frenkel effect; the accelerated emission process was attributed to a reduction of the Coulomb well barrier for the donor-like trap E1. (paper)