Growth parameter enhancement for MoS2 thin films synthesized by pulsed laser deposition
Creators
- 1. Materials Science and Engineering Department, The University of Texas at Dallas, 800 W Campbell Road RL 10, Richardson TX 75080 (United States)
- 2. Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, TX 75080 (United States)
- 3. Department of Advanced Materials Engineering, Kookmin University, Jeongneung-dong Seongbuk-gu, Seoul 136-702 (Korea, Republic of)
- 4. Alan MacDiarmid Nanotech Institute, The University of Texas at Dallas, 800 W Campbell Road RL 10, Richardson TX 75080 (United States)
Description
Two-dimensional materials such as graphene and MoS2 have been the main focus of intense research efforts over the past few years. The most common method of exfoliating these materials, although efficient for lab-scale experiments, is not acceptable for large area and practical applications. Here, we report the deposition of MoS2 layered films on amorphous (SiO2) and crystalline substrates (sapphire) using a pulsed laser deposition (PLD) method. Increased substrate temperature (∝700 C) and laser energy density (>530 mJ /cm2) promotes crystalline MoS2 films < 20 nm, as demonstrated by fast Fourier transform (FFT) and transmission electron microscopy (TEM). The method reported here opens the possibility for large area layered MoS2 films by using a laser ablation processes. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssc.201600091Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
- Journal Volume
- 13
- Journal Issue
- 10-12
- Journal Page Range
- p. 848-854
- ISSN
- 1610-1642
Conference
- Title
- Growth, characterization and applications to electronics and spintronics''
- Acronym
- E-MRS Spring meeting. Symposium K ''Group IV Semiconductors materials research
- Dates
- 2-6 May 2016
- Place
- Lille (France)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 48029763
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABLATION; AMORPHOUS STATE; ANNEALING; BINDING ENERGY; DEPOSITION; ELECTRON DIFFRACTION; GRAPHENE; LASER RADIATION; MOLYBDENUM SULFIDES; PHYSICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILICON OXIDES; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CARBON; CHALCOGENIDES; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY; FILMS; HEAT TREATMENTS; LASER SPECTROSCOPY; MICROSCOPY; MOLYBDENUM COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; RADIATIONS; REFRACTORY METAL COMPOUNDS; SCATTERING; SILICON COMPOUNDS; SPECTROSCOPY; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- With 8 figs., 1 tab., 41 refs.