Irradiation of the amorphous carbon films by picosecond laser pulses
- 1. Kaunas University of Technology, Studentu 50, LT-51368 Kaunas (Lithuania)
- 2. Center for Physical Sciences and Technology, Savanoriu Ave. 231, LT-02300 Vilnius (Lithuania)
Description
The effect of a picosecond laser irradiation on structure modification of diamond-like carbon (DLC) and graphite-like carbon (GLC) films was analyzed in this work. The DLC films were irradiated by Nd:YVO4 laser operating at the 532 nm wavelength with the picosecond (10 ps) pulse duration at the fluence in the range of (0.08–0.76) J/cm2. The GLC films were irradiated only at the fluence of 0.76 J/cm2. The different pulse number (1, 10, and 100) was used for irradiation the films. The micro-Raman spectroscopy measurements indicated that the laser irradiation led to rearrangement of the sp3 C–C bonds to the sp2 C=C bonds in the DLC films. The formation of silicon carbide (SiC) was found in the irradiated spot after 10 and 100 pulses. Modifications in the structure of the DLC film took place even in the areas with low intensity of the Gaussian beam wings (heat affected areas). The increase in the oxygen concentration up to ten times was detected in the heat affected areas after 100 pulses. Opposite to that, the laser irradiation decreased the oxygen concentration and smoothened the surface microrelief of the GLC films. The bonding type remained unchanged in the GLC films even after irradiation with 100 pulses per spot. - Highlights: • The picosecond laser irradiation led to the rearrangement of sp3 C-C to the sp2 C = C bonds in the diamond-like carbon film. • The ps-laser irradiation of the DLC films stipulates appearance of the aromatic carbon structures. • The bonding type of the graphite-like carbon films remained unchanged even after ps laser irradiation with 100 pulses.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2015.09.045Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2015.09.045;
- PII
- S0040-6090(15)00923-2;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 593
- Journal Page Range
- p. 116-123
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48020604
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; CHEMICAL BONDS; CONCENTRATION RATIO; DIAMONDS; FILMS; GRAPHITE; GRAPHITIZATION; LASER RADIATION; MICROSTRUCTURE; MODIFICATIONS; OXYGEN; PULSED IRRADIATION; RAMAN SPECTROSCOPY; SILICON; SILICON CARBIDES; SURFACES
- Descriptors DEC
- CARBIDES; CARBON; CARBON COMPOUNDS; DIMENSIONLESS NUMBERS; ELECTROMAGNETIC RADIATION; ELEMENTS; IRRADIATION; LASER SPECTROSCOPY; MINERALS; NONMETALS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.