Published October 28, 2002
| Version v1
Journal article
Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures
- 1. CRHEA/CNRS Rue B. Gregory, 06560 Valbonne (France)
- 2. Thales Research and Technology, Domaine de Corbeville, 91404 Orsay (France)
Description
Indium surface segregation is evidenced in real time by reflection high-energy electron diffraction (RHEED) during the molecular beam epitaxial growth of AlSb on InAs(Sb). The resulting interface width is determined from the RHEED specular beam intensity variation during the growth. It extends over several nanometers and increases with the growth temperature. Band structure simulations show that the indium segregation leads to a strong localization of the wave function associated to the first bound hole level at the AlSb on InAs(Sb) interface
Additional details
Identifiers
- DOI
- 10.1063/1.1517720;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 81
- Journal Issue
- 18
- Journal Page Range
- p. 3362-3364
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35017770
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ELECTRON DIFFRACTION; HETEROJUNCTIONS; INDIUM ARSENIDES; INTERFACES; MOLECULAR BEAM EPITAXY; REAL TIME SYSTEMS; REFLECTION; SEGREGATION; SEMICONDUCTOR MATERIALS; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; INDIUM COMPOUNDS; MATERIALS; PNICTIDES; SCATTERING; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- (c) 2002 American Institute of Physics.