Published December 19, 2007 | Version v1
Journal article Metadata-only

Transport hysteresis in AlGaAs/GaAs double quantum well systems with InAs quantum dots

Creators

  • 1. School of Information and Communication Engineering and Sungkyunkwan University, Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  • 2. Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

Description

We report on the charge storage effect of InAs quantum dots (QDs) embedded in the upper well of the AlGaAs/GaAs double quantum well structure. Zero field longitudinal resistivity and Hall resistance at weak magnetic fields exhibited a hysteresis effect during the sweeping of the gate voltage due to the accumulation of charges in the quantum dots. On reverse sweeping the gate voltage, the accumulated charges are prevented from being rapidly depleted due to the screening effect of the upper two-dimensional electron gas, which could significantly enhance the operation and reliability of QD-based non-volatile memory devices

Additional details

Identifiers

DOI
10.1088/0953-8984/19/50/506207;
PII
S0953-8984(07)57160-2;

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
19
Journal Issue
50
Journal Page Range
p. 506207
ISSN
0953-8984
CODEN
JCOMEL

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39060313
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM ARSENIDES; ELECTRIC POTENTIAL; ELECTRON GAS; GALLIUM ARSENIDES; HYSTERESIS; INDIUM ARSENIDES; MAGNETIC FIELDS; MEMORY DEVICES; QUANTUM DOTS; QUANTUM WELLS; RELIABILITY; TWO-DIMENSIONAL CALCULATIONS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES