Published May 1995
| Version v1
Journal article
Sputtering on Ag surface bombarded by 28Sin- (n = 1,2)
Creators
- 1. Academia Sinica, Shanghai, SH (China). Shanghai Inst. of Nuclear Research
- 2. Shanghai Univ. of Science and Technology, Shanghai (China)
Description
The angular distribution of sputtered atoms of Ag target bombarded by 28Sin-(n = 1,2) is measured using collection film technique combined with Rutherford backscattering spectroscopy. The experimental results show that the angular distribution of Ag atom induced by 28Si1- is enhanced as compared with that by 28Si2- in small ejecting angle θ. Combined with the analysis of target surface examined by scanning electron microscopy, we consider that this change of angular distributions may be indicate the influence of target surface topographical features
Additional details
Publishing Information
- Journal Title
- Acta Physica Sinica
- Journal Volume
- 44
- Journal Issue
- 5
- Journal Page Range
- p. 693-699.
- ISSN
- 1000-3290
- CODEN
- WLHPAR
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 27007062
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- ANGULAR DISTRIBUTION; ION PAIRS; ION SPECTROSCOPY; ION-ATOM COLLISIONS; MORPHOLOGY; RUTHERFORD SCATTERING; SCANNING ELECTRON MICROSCOPY; SILICON IONS; SILICON 28; SILVER; SPUTTERING
- Descriptors DEC
- ATOM COLLISIONS; CHARGED PARTICLES; COLLISIONS; DISTRIBUTION; ELASTIC SCATTERING; ELECTRON MICROSCOPY; ELEMENTS; EVEN-EVEN NUCLEI; ION COLLISIONS; IONS; ISOTOPES; LIGHT NUCLEI; METALS; MICROSCOPY; NUCLEI; SCATTERING; SILICON ISOTOPES; SPECTROSCOPY; STABLE ISOTOPES; TRANSITION ELEMENTS