Published June 2017 | Version v1
Journal article

Phase transformation during simultaneous chalcogenization of CuIn(S,Se)2 thin films using metalorganic sources

  • 1. Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)
  • 2. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan)

Description

Simultaneous chalcogenization of CuIn(Sy,Se1-y)2 (CISSe) thin films has been demonstrated using organometallic sources such as diethylselenide [(C2H5)2Se] and ditertiarybutylsulfide [(t-C4H9)2S] to obtain homogeneous CISSe pseudobinary alloys with controlled amounts of Se and S species. Low-temperature chalcogenization at 300 C resulted in the formation of Cu-SSe and In-SSe alloys diffused into the Cu11In9 metallic precursor. On the other hand, high-temperature chalcogenization produced CISSe thin films without additional phases. The obtained results can be used for elucidating the mechanism of simultaneous chalcogenization and development of high-performance and cost-effective commercial applications. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
Journal Volume
14
Journal Issue
6
Journal Page Range
p. 1-4
ISSN
1610-1642
CODEN
PSSCGL

Conference

Title
20. international conference on ternary and multinary compounds
Acronym
20. ICTMC
Dates
5-9 Sep 2016
Place
Halle-Saale (Germany)

Optional Information

Notes
With 5 figs.