Phase transformation during simultaneous chalcogenization of CuIn(S,Se)2 thin films using metalorganic sources
- 1. Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)
- 2. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan)
Description
Simultaneous chalcogenization of CuIn(Sy,Se1-y)2 (CISSe) thin films has been demonstrated using organometallic sources such as diethylselenide [(C2H5)2Se] and ditertiarybutylsulfide [(t-C4H9)2S] to obtain homogeneous CISSe pseudobinary alloys with controlled amounts of Se and S species. Low-temperature chalcogenization at 300 C resulted in the formation of Cu-SSe and In-SSe alloys diffused into the Cu11In9 metallic precursor. On the other hand, high-temperature chalcogenization produced CISSe thin films without additional phases. The obtained results can be used for elucidating the mechanism of simultaneous chalcogenization and development of high-performance and cost-effective commercial applications. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
- Journal Volume
- 14
- Journal Issue
- 6
- Journal Page Range
- p. 1-4
- ISSN
- 1610-1642
- CODEN
- PSSCGL
Conference
- Title
- 20. international conference on ternary and multinary compounds
- Acronym
- 20. ICTMC
- Dates
- 5-9 Sep 2016
- Place
- Halle-Saale (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 48070114
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BAND THEORY; COPPER SELENIDES; COPPER SULFIDES; CRYSTAL LATTICES; DEPTH; ENERGY GAP; INDIUM SELENIDES; INDIUM SULFIDES; LATTICE PARAMETERS; MORPHOLOGY; ORGANOMETALLIC COMPOUNDS; PHASE TRANSFORMATIONS; PRECURSOR; SCANNING ELECTRON MICROSCOPY; SPUTTERING; THIN FILMS; VAPOR DEPOSITED COATINGS; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COATINGS; COHERENT SCATTERING; COPPER COMPOUNDS; CRYSTAL STRUCTURE; DIFFRACTION; DIMENSIONS; ELECTRON MICROSCOPY; FILMS; INDIUM COMPOUNDS; MICROSCOPY; ORGANIC COMPOUNDS; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- With 5 figs.