Molecular dynamics for low temperature plasma-surface interaction studies
Creators
- 1. Groupe de Recherches sur l'Energetique des Milieux Ionises, UMR6606 CNRS, Universite d'Orleans BP 6744, 45067 Orleans Cedex 2 (France)
Description
The mechanisms of physical and chemical interactions of low temperature plasmas with surfaces can be fruitfully explored using molecular dynamics (MD) simulations. MD simulations follow the detailed motion of sets of interacting atoms through integration of atomic equations of motion, using inter-atomic potentials that can account for bond breaking and formation that result when energetic species from the plasma impact surfaces. This paper summarizes the current status of the technique for various applications of low temperature plasmas to material processing technologies. The method is reviewed, and commonly used inter-atomic potentials are described. Special attention is paid to the use of MD in understanding various representative applications, including tetrahedral amorphous carbon film deposition from energetic carbon ions, the interactions of radical species with amorphous hydrogenated silicon films, silicon nanoparticles in plasmas, and plasma etching. (topical review)
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/42/19/194011Additional details
Identifiers
- DOI
- 10.1088/0022-3727/42/19/194011;
- PII
- S0022-3727(09)71801-7;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 42
- Journal Issue
- 19
- Journal Page Range
- [27 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42066071
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- ATOMS; CARBON; CARBON IONS; COMPUTERIZED SIMULATION; DEPOSITION; EQUATIONS OF MOTION; ETCHING; FILMS; MOLECULAR DYNAMICS METHOD; NANOSTRUCTURES; PARTICLES; PLASMA; PLASMA SIMULATION; POTENTIALS; SILICON; SURFACES
- Descriptors DEC
- CALCULATION METHODS; CHARGED PARTICLES; DIFFERENTIAL EQUATIONS; ELEMENTS; EQUATIONS; IONS; NONMETALS; PARTIAL DIFFERENTIAL EQUATIONS; SEMIMETALS; SIMULATION; SURFACE FINISHING