Published October 12, 2011 | Version v1
Journal article Metadata-only

NiCr thin film resistor integration with InP technology

Creators

  • 1. Technion, Israel Institute of Technology, Department of Electrical Engineering, Wolfson Microelectronics Research Center, Haifa 32000 (Israel)
  • 2. Technion, Israel Institute of Technology, Solid State Institute, Surface Science Lab, Haifa 32000 (Israel)

Description

We present a study of nickel chromium (NiCr) thin film resistors deposited on InP substrate. In contrast to previously published work, the NiCr film resistance changes by a factor of 2.5 after temperature exposure to 250 °C in air. In order to explain this effect, XPS and SIMS tests were performed on NiCr films as-deposited and with temperature treatment. Annealed samples show strong in and out diffusion of Ni and In, respectively. Interfacial reactions were described explaining the severe resistivity decrease. As a solution, a SiN diffusion barrier between NiCr and InP is proposed and applied

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/26/10/105004

Additional details

Identifiers

DOI
10.1088/0268-1242/26/10/105004;
PII
S0268-1242(11)95022-6;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
26
Journal Issue
10
Journal Page Range
[3 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45014412
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DEPOSITS; DIFFUSION BARRIERS; INDIUM PHOSPHIDES; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; RESISTORS; SILICON NITRIDES; SUBSTRATES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
CHEMICAL ANALYSIS; ELECTRICAL EQUIPMENT; ELECTRON SPECTROSCOPY; EQUIPMENT; FILMS; INDIUM COMPOUNDS; MICROANALYSIS; NITRIDES; NITROGEN COMPOUNDS; NONDESTRUCTIVE ANALYSIS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; SILICON COMPOUNDS; SPECTROSCOPY