Published June 2008
| Version v1
Miscellaneous
Temperature dependence photoluminescence study of GaAs1-xPx/GaAs structure
Creators
- 1. Gazi University, Department of Physics, Ankara (Turkey)
- 2. National Academy of Science, Institute of Physics, Baku (Azerbaijan)
Description
The GaAs1-xPx/GaAs (x=0.29) structure was grown on SI-GaAs (100) substrate by solid source molecular beam epitaxy (MBE) with continuously growth (C G) method. Grown sample was characterized using Photoluminescence (P L) measurements. Phosphorous composition was calculated using the Pl emission peak position at the room temperature (300K). Also, low temperature photoluminescence peaks were analyzed and Full Width Half Maximum (FWHM) was calculated from the spectra
Additional details
Additional titles
- Original title (English)
- Pyatoy mejdunarodnoy nauchno-texnicheskoy konferencii posvyashennoy 85-letiyu Geydara Alieva
Publishing Information
- Imprint Title
- The fifth international scientific technical conference dedicated to the eighteen fifth anniversary of Haydar Aliyev
- Imprint Pagination
- [vp.]
- Journal Volume
- 241
- Journal Issue
- 1
- Series
- Actual Problems of Physics
- Journal Page Range
- p. 30-32
Conference
- Title
- 5. international scientific technical conference dedicated to 85. anniversary of Haydar Aliyev
- Original Conference Title
- Pyatoy mejdunarodnoy nauchno-texnicheskoy konferencii posvyashennoy 85-letiyu Geydara Alieva
- Dates
- 25-27 Jun 2008
- Place
- Baku (Azerbaijan)
INIS
- Country of Publication
- Azerbaijan
- Country of Input or Organization
- Azerbaijan
- INIS RN
- 47079081
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SOLIDS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CRYSTAL GROWTH METHODS; EMISSION; EPITAXY; LUMINESCENCE; PHOTON EMISSION; PHYSICAL PROPERTIES
Optional Information
- Notes
- 3 figs Imprint:Pyatoy mejdunarodnoy nauchno-texnicheskoy konferencii posvyashennoy 85-letiyu Geydara Alieva