Published December 26, 2005
| Version v1
Journal article
Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping
Creators
- 1. Department of Applied Physics, Chalmers University of Technology, SE-41296 Goeteborg (Sweden)
- 2. Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)
Description
Formation of MnAs quantum dots in a regular ring-like distribution has been found on molecular beam epitaxy grown (GaMn)As(100) surfaces after low-temperature annealing under As capping. The appearance of the dots depends on the thickness and Mn concentration in the (GaMn)As layer. With 5 at. % substitutional Mn the quantum dots showed up for layers thicker than 100 nm. For thinner layers the surfaces of the annealed samples are smooth and well ordered with 1x2 surface reconstruction, just as for as-grown (GaMn)As. The annealed surfaces are Mn rich, and are well suited for continued epitaxial growth
Additional details
Identifiers
- DOI
- 10.1063/1.2158524;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 87
- Journal Issue
- 26
- Journal Page Range
- p. 263114-263114.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37081129
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ARSENIC; CRYSTAL GROWTH; FERROMAGNETIC MATERIALS; GALLIUM ARSENIDES; LAYERS; MAGNETIC SEMICONDUCTORS; MANGANESE ARSENIDES; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SURFACES; THICKNESS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DIMENSIONS; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; HEAT TREATMENTS; MAGNETIC MATERIALS; MANGANESE COMPOUNDS; MATERIALS; NANOSTRUCTURES; PNICTIDES; SEMICONDUCTOR MATERIALS; SEMIMETALS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2005 American Institute of Physics