Ionized clusters: A technique for low energy ion beam deposition

Ionized cluster beams (ICBs) are widely used to deposit metal, semiconductor, and insulating films. This paper describes the current state of this technology in both fundamental and applications areas. One important ambiguity in the theory of metal cluster formation is addressed. Rutherford back-scattering is used to measure the extent of any displacement of surface atoms caused by ICBs. The minimal amount of such surface damage is confirmed by the close-to-ideal values measured for Schottky barrier height on an Al/Si interface. Several examples of ICBs are described