Published 2003
| Version v1
Miscellaneous
Atomic layer deposition of oxide dielectric films for microelectronics
Creators
- 1. Department of Chemistry, University of Helsinki, Helsinki (Finland)
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- Zr, Hf oxides as materials components
Publishing Information
- Imprint Title
- Abstracts of The European Materials Conference E-MRS 2003 Fall Meeting
- Imprint Pagination
- 287 p.
- Journal Page Range
- p. 62
Conference
- Title
- European Materials Conference E-MRS 2003 Fall Meeting
- Dates
- 15-19 Sep 2003
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 35101068
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- BARIUM COMPOUNDS; BISMUTH COMPOUNDS; CAPACITORS; CRYSTAL GROWTH METHODS; DIELECTRIC MATERIALS; FERROELECTRIC MATERIALS; HAFNIUM OXIDES; MICROELECTRONICS; PERMITTIVITY; STRONTIUM COMPOUNDS; TANTALATES; TITANATES; ZIRCONIUM OXIDES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; HAFNIUM COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; TANTALUM COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS