Published March 2013 | Version v1
Journal article Metadata-only

Peculiarly strong room-temperature ferromagnetism from low Mn-doping in ZnO grown by molecular beam epitaxy

Creators

  • 1. Quantum Structures Laboratory, Department of Electrical Engineering, University of California at Riverside, Riverside, California 92521 (United States)
  • 2. Department of Physics and Astronomy, University of California at Riverside, Riverside, California 92521 (United States)
  • 3. Laboratory for Electron and X-ray Instrumentation, California Institute for Telecommunications and Information Technology, University of California Irvine, Irvine, California 92697 (United States)
  • 4. NHMFL, Florida State University, 1800 E. Paul Dirac Dr., Tallahassee, FL 32310-3706 (United States)

Description

Strong room-temperature ferromagnetism is demonstrated in single crystalline Mn-doped ZnO thin films grown by molecular beam epitaxy. Very low Mn doping concentration is investigated, and the measured magnetic moment is much larger than what is expected for an isolated ion based on Hund's rules. The ferromagnetic behavior evolves with Mn concentration. Both magnetic anisotropy and anomalous Hall effect confirm the intrinsic nature of ferromagnetism. While the Mn dopant plays a crucial role, another entity in the system is needed to explain the observed large magnetic moments.

Additional details

Identifiers

DOI
10.1063/1.4794799;

Publishing Information

Journal Title
AIP Advances
Journal Volume
3
Journal Issue
3
Journal Page Range
p. 032110-032110.16
ISSN
2158-3226
CODEN
AAIDBI

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44063255
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Descriptors DEI
ANISOTROPY; DOPED MATERIALS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; HALL EFFECT; IONS; MAGNETIC MOMENTS; MANGANESE; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; CRYSTALS; ELEMENTS; EPITAXY; FILMS; MAGNETIC MATERIALS; MAGNETISM; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENTS; ZINC COMPOUNDS