Properties of silicon surface after ionic-chemical etching

Independent ion source has been used to investigate the effect of the process of ionic-chemical etching on the state of monocrystal silicon surface. Mixtures on the base of chladone 14 were used as a generator gas. Formation of fine amorphous layer on the silicon surface as well as appearance on it iron traces due to sputtering of source anode is discovered. Depth of the amorphous layer, depending on etching regimes determines the value of contact resistance of interface silicon-aluminium metallization as well as parameters of Schottky barrier. Low temperature annealing of the samples in the nitrogen media at the temperature of 723 K during 30 min. practically completely restore the initial parameters of interface semiconductor-metal