Published January 2007 | Version v1
Journal article

Room-temperature stimulated emission from ZnO thin films grown by radio-frequency magnetron sputtering

  • 1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China)
  • 2. Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812 (Japan)

Description

ZnO thin films have been deposited by RF-magnetron sputtering on SiO2 substrates. A, B excitons from the absorption spectra at room temperature and A, B and C excitons from the reflectance spectra at the temperature below 166.7 K have been clearly observed. These results indicate that ZnO thin films have a good wurtzite crystal structure. The stimulated emission has been observed at room temperature under various excitation intensities. In the edge emission geometry we determine the gain magnitude with the variable stripe length method. The optical gain is shown as a result of the electron-hole plasma process, and exhibits the highest gain reaching value 270 cm-1 at an excitation density of 1122 kW/cm2

Additional details

Identifiers

DOI
10.1016/j.jlumin.2006.01.299;
PII
S0022-2313(06)00303-6;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
122-123
Journal Page Range
p. 825-827
ISSN
0022-2313
CODEN
JLUMA8

Conference

Title
2005 International conference on luminescence and optical spectroscopy of condensed matter
Acronym
ICL '05
Dates
25-29 Jul 2005
Place
Beijing (China)

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.